The purpose of this paper is the investigation of the main Gunn diode oscillator characteristics with a hemispherical dielectric resonator which is shielded by a metal cylinder. The frequency, output power and electronic tuning of frequency, the steepness of which allows one to estimate the frequency stability in relation to the parasitic change of the Gunn diode voltage, and their comparative analysis with the characteristics of generation in a similar open dielectric resonator.
S. Kharkovsky et al., "Millimeter Wave Oscillator Based Dielectric Hemisphere with Cylinder Shield," Proceedings of the Fourth International Kharkov Symposium on Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001, Institute of Electrical and Electronics Engineers (IEEE), Jan 2001.
The definitive version is available at http://dx.doi.org/10.1109/MSMW.2001.947288
Fourth International Kharkov Symposium on Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001
Electrical and Computer Engineering
Keywords and Phrases
DRO; EHF; Gunn Diode Oscillator Characteristics; Gunn Diode Voltage; Gunn Oscillators; MM-Wave Oscillator Characteristics; Circuit Tuning; Dielectric Resonator Oscillators; Electromagnetic Shielding; Electronic Tuning; Frequency Stability; Metal Cylinder Shield; Millimetre Wave Oscillators; Output Power; Shielded Hemispherical Dielectric Resonator; Solid-State Oscillators
Article - Conference proceedings
© 2001 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.