Use of voids to stabilize dislocation networks at elevated temperatures in aluminum single crystals
Materials Science and Engineering
Ph. D. in Metallurgical Engineering
University of Missouri--Rolla
ix, 87 pages
© 1991 Purushottam Ganpatrao Manusmare, All rights reserved.
Dissertation - Citation
Print OCLC #
Link to Catalog Record
Full-text not available: Request this publication directly from Missouri S&T Library or contact your local library.http://laurel.lso.missouri.edu/record=b2446349~S5
Manusmare, Purushottam G., "Use of voids to stabilize dislocation networks at elevated temperatures in aluminum single crystals" (1991). Doctoral Dissertations. 846.
Share My Dissertation If you are the author of this work and would like to grant permission to make it openly accessible to all, please click the button above.