Title

Microstructure of Interfaces Made by Epitaxial Electrodeposition

Abstract

Cuprous oxide (Cu 2O) thin films were electrodeposited onto Si and InP single-crystal substrates, and the microstructure of the resultant Cu 2O/Si and Cu 2O/InP interfaces was investigated using transmission electron microscopy. The interfaces have a unique epitaxial orientation relationship, which can be described as a 45° rotation around the common [001] axis representing the substrate normal. The Cu 2O films are separated from the Si and InP substrates by amorphous interlayers with compositions close to SiO 2 and InPO 4 - despite the epitaxy. A lateral overgrowth on native/concomitantly-formed oxide layers and an inter-reaction subsequent to the nucleation of epitaxial Cu 2O seeds are suggested as potential formation mechanisms of the interfacial microstructure.

Meeting Name

Proceedings - Electrochemical Society (2006, Orlando, FL)

Department(s)

Chemistry

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2006 The Electrochemical Society (ECS), All rights reserved.


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