Microstructure of Interfaces Made by Epitaxial Electrodeposition
Cuprous oxide (Cu 2O) thin films were electrodeposited onto Si and InP single-crystal substrates, and the microstructure of the resultant Cu 2O/Si and Cu 2O/InP interfaces was investigated using transmission electron microscopy. The interfaces have a unique epitaxial orientation relationship, which can be described as a 45° rotation around the common  axis representing the substrate normal. The Cu 2O films are separated from the Si and InP substrates by amorphous interlayers with compositions close to SiO 2 and InPO 4 - despite the epitaxy. A lateral overgrowth on native/concomitantly-formed oxide layers and an inter-reaction subsequent to the nucleation of epitaxial Cu 2O seeds are suggested as potential formation mechanisms of the interfacial microstructure.
F. Oba et al., "Microstructure of Interfaces Made by Epitaxial Electrodeposition," Proceedings - Electrochemical Society, The Electrochemical Society (ECS), Jan 2006.
Proceedings - Electrochemical Society (2006, Orlando, FL)
Article - Conference proceedings
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