Title

Survey of the interatomic potentials for GaN and AlN for thermal properties

Presenter Information

Zachary Driemeyer

Department

Physics

Major

Physics

Research Advisor

Chernatynskiy, Aleksandr V.

Advisor's Department

Physics

Funding Source

First Year Research Experience (FYRE) Program

Abstract

Gallium Nitride and Aluminum Nitride are key materials for the future high-power electronics. Such devices are characterized by very large electric current which in turn generate enormous amount of heat. Removal of this heat from the device depends crucially on the thermal conductivity of GaN and AlN and thermal conductance through their interface with other components of the device. Elucidation of such boundary conductance requires high quality interatomic potentials that can adequately describe thermal transport properties. In this work, we identified available in the literature interatomic potentials for GaN and AlN and using General Utility Lattice Program (GULP), we surveyed their performance for the elucidation of the thermal transport properties. A recommendation is made for the best potential for the description of the thermal transport in these compounds which will be applied in the future studies.

Biography

Zachary Driemeyer is a Freshman Physics major at Missouri S&T with minors in Literature and Mathematics. He is from House Springs, MO, currently works at a dog care and training company, and plans on going into graduate school and eventually pursuing a PhD after graduation.

Research Category

Sciences

Presentation Type

Poster Presentation

Document Type

Poster

Location

Upper Atrium

Presentation Date

17 Apr 2018, 9:00 am - 12:00 pm

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Apr 17th, 9:00 AM Apr 17th, 12:00 PM

Survey of the interatomic potentials for GaN and AlN for thermal properties

Upper Atrium

Gallium Nitride and Aluminum Nitride are key materials for the future high-power electronics. Such devices are characterized by very large electric current which in turn generate enormous amount of heat. Removal of this heat from the device depends crucially on the thermal conductivity of GaN and AlN and thermal conductance through their interface with other components of the device. Elucidation of such boundary conductance requires high quality interatomic potentials that can adequately describe thermal transport properties. In this work, we identified available in the literature interatomic potentials for GaN and AlN and using General Utility Lattice Program (GULP), we surveyed their performance for the elucidation of the thermal transport properties. A recommendation is made for the best potential for the description of the thermal transport in these compounds which will be applied in the future studies.