Location
Innovation Lab, Room 213
Start Date
4-2-2025 10:30 AM
End Date
4-2-2025 11:00 AM
Presentation Date
2 April 2025, 10:30am - 11:00am
Biography
Joshua Santy is a senior at Missouri S&T double majoring in Physics and Applied Mathematics. His passion for Physics and research led him to collaborate with Dr. Medvedeva, exploring the structure and electronic properties of metal-doped amorphous Tin Oxide for CMOS Applications. Josh enjoys programming, working on several individual physics and math-based projects, and participating in coding competitions such as PickHacks. Beyond his academic pursuits, Joshua is a member and a former officer of the Society of Physics Students at S&T and actively contributes as a member and media team participant for the Christian Campus Fellowship. He enjoys working on his hobbies which include playing instruments, unicycling, juggling, and baking scrumptious lemon gooey cookies.
Meeting Name
2025 - Miners Solving for Tomorrow Research Conference
Department(s)
Physics
Document Type
Presentation
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Joseph Santy, All rights reserved
Amorphous Metal Transparent Conducting Oxide P-type Semiconductors
Innovation Lab, Room 213
Comments
Advisor: Thomas Vojta
Abstract:
Transparent conducting oxides (TCOs) are crucial for energy and optoelectronic devices. While high-performance n-type TCOs are well known, p-type TCOs with high conductivity and mobility remain elusive. Studied p-type TCOs exhibit lower carrier mobilities (<1 cm2/(Vs)) compared to n-types (10-100 cm2/(Vs)). This difference stems from inherent differences in their band structure, with n-types containing charges in the more dispersed conduction band but p-types featuring holes in the flatter valence band. We explore ab-initio liquid quench simulated amorphous SnO doped with Ta and Sr to enhance hole mobility while maintaining amorphous structural stability. This research covers structural properties - including energy-density stability, effective coordination number, and void formations - as well as charge localization. Although the metal dopants improve certain p-type TCO properties, challenges remain with hole scattering and medium-range bonding. Future research should investigate alternative metal dopants stabilize Sn2+,widen the band gap, and reduce defects, thereby lowering valence localization.