Utilization of A-Si:H Switching Diodes for Signal Readout from A-Si:H Pixel Detectors
Abstract
Two-dimensional arrays of amorphous silicon photodiodes can be used as position-sensitive radiation detectors when they are coupled to an appropriate phosphor. We have developed signal readout schemes from amorphous silicon photodiode arrays utilizing one or two switching diodes attached to each pixel photodiode. Individual cells and prototype arrays of amorphous silicon photodiodes with single- and double-diode switching readout were fabricated and tested. A charge storage time and a readout time were measured. The measurement results were analyzed by simple circuit theory.
Recommended Citation
G. Cho et al., "Utilization of A-Si:H Switching Diodes for Signal Readout from A-Si:H Pixel Detectors," Materials Research Society Symposium - Proceedings, Cambridge University Press, Jan 1993.
The definitive version is available at https://doi.org/10.1557/PROC-297-969
Meeting Name
Proceedings of the MRS Spring Meeting
Department(s)
Nuclear Engineering and Radiation Science
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 1993 Cambridge University Press, All rights reserved.
Publication Date
01 Jan 1993
