Thick Amorphous Silicon Layers Suitable for the Realization of Radiation Detectors
Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH4 at a substrate temperature approx. 150°C and subsequent annealing at 160°C for about 100 hours. The stress in the films obtained this way decreased to approx. 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 × 1015 cmˉ³ to 7 × 1014 cmˉ³ without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material.
W. S. Hong et al., "Thick Amorphous Silicon Layers Suitable for the Realization of Radiation Detectors," Materials Research Society Symposium - Proceedings, Cambridge University Press, Jan 1995.
The definitive version is available at https://doi.org/10.1557/PROC-377-773
Proceedings of the 1995 MRS Spring Meeting
Nuclear Engineering and Radiation Science
Article - Conference proceedings
© 1995 Cambridge University Press, All rights reserved.
01 Jan 1995