Radiation and High Temperature Effects in MOSFET
A number of studies have been conducted in the past to model the behavior of MOSFET under both high temperature and irradiation conditions. The investigations were carried out to explore the possibility of salvaging irradiation-damaged n-channel and p-channel MOSFETs by proper annealing after irradiation. The MOSFETs were obtained from the Sandia National Laboratories. The first phase of the experiments consisted of obtaining device characteristics at elevated temperature (up to 200 C). In the second phase of experiments the devices were irradiated to a maximum dose of 10 Mrad (Si) using a Co-60 source. The devices were subsequently annealed at a temperature of 125 C for 48 hours to study annealing of the damage caused by irradiation. The results are reported
T. J. Lin et al., "Radiation and High Temperature Effects in MOSFET," Transactions of the Symposium on Space Nuclear Power Systems, Institute for Space Nuclear Power Studies, Jan 1986.
Symposium on Space Nuclear Power systems
Mining and Nuclear Engineering
Article - Conference proceedings
© 1986 Institute for Space Nuclear Power Studies, All rights reserved.
01 Jan 1986