Local Doping Modulation for Improving Quantum Efficiency in GaN-Based Light-Emitting Diodes

Abstract

Improvement of quantum efficiency (QE) in GaN-based light-emitting diodes is explored by engineering the band-edge profile with local doping modulation that leads to band bending due to the built-in electric field. Specifically, by p-type doping selected quantum well (QW) barriers, the overall Auger recombination rate can be suppressed due to more uniform carrier distributions, or electron leakage can be reduced due to greater effective barrier height of the electron blocking layer in the conduction band. Having doping modulation at several QW barriers, these two effects may be adopted in one structure combinatively. Physical mechanisms of performance improvement and the effects of p-type doping at different QW barriers are investigated detailedly. © 2013 the Japan Society of Applied Physics.

Department(s)

Mechanical and Aerospace Engineering

International Standard Serial Number (ISSN)

0021-4922

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2013 Institute of Physics - IOP Publishing, All rights reserved.

Publication Date

01 Jan 2013

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