Weak Coupling of Monolayer Lead Sulfide Quantum Dots to Silicon Photonic Crystal Cavities At Near Infrared Wavelengths

Author

Ranojoy Bose
Jie Gao, Missouri University of Science and TechnologyFollow
Fangwen Sun
James F. McMillan
Xiaodong Yang, Missouri University of Science and TechnologyFollow
Charlton J. Chen
Chee Wei Wong

Abstract

We present experimental analysis of weak coupling for monolayer lead sulfide quantum dots coupled to silicon photonic crystal cavities between 4K and room temperature, as well as power-saturation measurements of dots at 4K.

Recommended Citation

R. Bose et al., "Weak Coupling of Monolayer Lead Sulfide Quantum Dots to Silicon Photonic Crystal Cavities At Near Infrared Wavelengths," International Quantum Electronics Conference Proceedings, The Optical Society (OSA), Jan 2009.

The definitive version is available at https://doi.org/10.1364/IQEC.2009.IMB5

Meeting Name

International Quantum Electronics Conference

Department(s)

Mechanical and Aerospace Engineering

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2009 The Optical Society (OSA), All rights reserved.

Publication Date

01 Jan 2009