Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer

Author

X.-X. Wen
Xiaodong Yang, Missouri University of Science and TechnologyFollow
M. He
Y. Li
G. Wang
P.-Y. Lu
W.-N. Qian
Y. Li
W.-W. Zhang
W.-B. Wu
F.-S. Chen

Abstract

GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program. It is found that the structure with an AlInN electron blocking layer shows improved light output power, lower current leakage and efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly accounted for by efficient electron blocking. It can be concluded that Auger recombination is responsible for the dominant origin of the efficiency droop of a GaN-based LED as current increases. © 2012 Chinese Physical Society and IOP Publishing Ltd.

Recommended Citation

X. Wen and X. Yang and M. He and Y. Li and G. Wang and P. Lu and W. Qian and Y. Li and W. Zhang and W. Wu and F. Chen, "Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer," Chinese Physics Letters, Institute of Physics - IOP Publishing, Jan 2012.

The definitive version is available at https://doi.org/10.1088/0256-307X/29/9/097304

Department(s)

Mechanical and Aerospace Engineering

International Standard Serial Number (ISSN)

0256-307X

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2012 Institute of Physics - IOP Publishing, All rights reserved.

Publication Date

01 Jan 2012