We compute the interfacial free energy of a silicon system in contact with flat and structured walls by molecular dynamics simulation. The thermodynamics integration method, previously applied to Lennard-Jones potentials [R. Benjamin and J. Horbach, J. Chem. Phys. 137, 044707 (2012)], has been extended and implemented in Tersoff potentials with two-body and three-body interactions taken into consideration. The thermodynamic integration scheme includes two steps. In the first step, the bulk Tersoff system is reversibly transformed to a state where it interacts with a structureless flat wall, and in a second step, the flat structureless wall is reversibly transformed into an atomistic SiO2 wall. Interfacial energies for liquid silicon-wall interfaces and crystal silicon-wall interfaces have been calculated. The calculated interfacial energies have been employed to predict the nucleation mechanisms in a slab of liquid silicon confined by two walls and compared with MD simulation results.
W. Shou and H. Pan, "Silicon-Wall Interfacial Free Energy via Thermodynamics Integration," Journal of Chemical Physics, vol. 145, no. 18, American Institute of Physics (AIP), Jan 2016.
The definitive version is available at https://doi.org/10.1063/1.4966975
Mechanical and Aerospace Engineering
Center for High Performance Computing Research
Second Research Center/Lab
Intelligent Systems Center
International Standard Serial Number (ISSN)
Article - Journal
© 2016 American Institute of Physics (AIP), All rights reserved.
01 Jan 2016