The effect of a variation of the indium and nitrogen concentrations in Inᵪ Ga1-x As1-y Ny /GaAs multiquantum wells grown by molecular beam epitaxy is studied systematically by room temperature photoreflectance spectroscopy. The band gap redshift caused by a nitrogen fraction of 1.5% decreases by as much as 30% as the indium fraction increases from 0% to 20%. A moderate increase of electron effective mass (Δmₑ ~ 0.03m₀) is found in all samples containing nitrogen (y ≳ 1%). In compressively strained quantum wells, the energy separation between the first confined heavy and light hole energy levels decreases in a regular manner as the nitrogen fraction increases from 0% to 1.7%, suggesting that the modification of the valence bands due to nitrogen incorporation can be explained by the strain variation.
J. B. Heroux et al., "Photoreflectance Spectroscopy of Strained (In)GaAsN/GaAs Multiple Quantum Wells," Journal of Applied Physics, vol. 92, no. 8, pp. 4361-4366, American Institute of Physics (AIP), Oct 2002.
The definitive version is available at https://doi.org/10.1063/1.1507817
Mechanical and Aerospace Engineering
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© 2002 American Institute of Physics (AIP), All rights reserved.
15 Oct 2002