InGaAsNSb: A Novel Material for Long-Wavelength Semiconductor Lasers
Quantum wells grown by slid source molecular beam epitaxy using a nitrogen radiofrequency plasma source for long wavelength semiconductor lasers was experimentally demonstrated. Antimony suppressed the three dimensional growth and improved the interface of the quantum well acting as a surfactant. The effect of excess antimony flux on the optial properties of the quantum well was investigated by photoluminescence. Feasibility of the quantum well for 1.55 ?m laser was demonstrated by 1.53 ?m photoluminescence at room temperature.
X. Yang et al., "InGaAsNSb: A Novel Material for Long-Wavelength Semiconductor Lasers," Conference on Lasers and Electro-Optics Europe - Technical Digest, Institute of Electrical and Electronics Engineers (IEEE), Jan 2001.
The definitive version is available at https://doi.org/10.1109/CLEO.2001.947715
Conference on Lasers and Electro-Optics (CLEO)
Mechanical and Aerospace Engineering
Optical Society of America
IEEE/ LEOS Lasers and Electro Optics Society
American Physical Society
Article - Conference proceedings
© 2001 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Jan 2001