We demonstrate a GaAs-based p-i-n resonant-cavity-enhanced (RCE) GalnNAs photodetector operating near 1.3 µm. The device design was optimized using a transfer matrix method and experimental absorption spectra obtained from p-i-n structures grown without a resonant cavity. The RCE photodetector was fabricated in a single growth step by using GaAs/AlAs distributed Bragg reflectors for the top and bottom mirrors. A 72% quantum efficiency was obtained with a full width at half maximum of 11 nm.
J. B. Heroux et al., "GalnNAs Resonant-Cavity-Enhanced Photodetector Operating at 1.3 µm," Applied Physics Letters, vol. 75, no. 18, pp. 2716-2718, American Institute of Physics (AIP), Sep 1999.
The definitive version is available at https://doi.org/10.1063/1.125126
Mechanical and Aerospace Engineering
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