Molecular Beam Epitaxial Growth of InGaAsN:Sb/GaAs Quantum Wells for Long-Wavelength Semiconductor Lasers

Author

Xiaodong Yang, Missouri University of Science and TechnologyFollow
M. J. Jurkovic
J. B. Heroux
W. I. Wang

Abstract

Highly strained InGaAs/GaAs quantum wells were grown by solid source molecular beam epitaxy, introducing a Sb flux during growth. Acting as a surfactant, the Sb flux improved the crystal quality and enhanced the optical properties of the QWs as evidenced by photoluminescence measurements. These improvements were confirmed by performance of broad-area single QW laser diodes. An InGaAsN:Sb/GaAs single QW 1.2 µm diode under pulse operation at room temperature exhibited a threshold current density of 520 A/cm2, a value 6 folds lower compared to a diode without the Sb flux.

Recommended Citation

X. Yang et al., "Molecular Beam Epitaxial Growth of InGaAsN:Sb/GaAs Quantum Wells for Long-Wavelength Semiconductor Lasers," Applied Physics Letters, American Institute of Physics (AIP), Jan 1999.

The definitive version is available at https://doi.org/10.1063/1.124311

Department(s)

Mechanical and Aerospace Engineering

International Standard Serial Number (ISSN)

0003-6951

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1999 American Institute of Physics (AIP), All rights reserved.

Publication Date

01 Jan 1999