Molecular Beam Epitaxial Growth of InGaAsN:Sb/GaAs Quantum Wells for Long-Wavelength Semiconductor Lasers
Highly strained InGaAs/GaAs quantum wells were grown by solid source molecular beam epitaxy, introducing a Sb flux during growth. Acting as a surfactant, the Sb flux improved the crystal quality and enhanced the optical properties of the QWs as evidenced by photoluminescence measurements. These improvements were confirmed by performance of broad-area single QW laser diodes. An InGaAsN:Sb/GaAs single QW 1.2 µm diode under pulse operation at room temperature exhibited a threshold current density of 520 A/cm2, a value 6 folds lower compared to a diode without the Sb flux.
X. Yang et al., "Molecular Beam Epitaxial Growth of InGaAsN:Sb/GaAs Quantum Wells for Long-Wavelength Semiconductor Lasers," Applied Physics Letters, American Institute of Physics (AIP), Jan 1999.
The definitive version is available at https://doi.org/10.1063/1.124311
Mechanical and Aerospace Engineering
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© 1999 American Institute of Physics (AIP), All rights reserved.
01 Jan 1999