InGaAsNSb/GaAs quantum wells (QWs) were grown by solid-source molecular-beam epitaxy using a N2 radio frequency plasma source. The effect of adding Sb during growth of InGaAsN/GaAs QWs was studied. X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy studies indicate that Sb suppresses the three-dimensional growth and improves the interface of the QWs. X-ray diffraction and secondary ion mass spectroscopy analysis show that Sb gets incorporated into the quantum well, which becomes a quinternary compound that was previously unexplored. The introduction of Sb during growth of InGaAsN/GaAs QWs significantly enhances the optical properties of the QWs. 1.53 /spl µm room-temperature photoluminescence was obtained from InGaAsNSb/GaAs QWs, which demonstrates the potential of fabricating 1.55 /spl µm InGaAsNSb/GaAs QW lasers for long-haul applications.
X. Yang et al., "InGaAsNSb/GaAs Quantum Wells for 1.55 µm Lasers Grown by Molecular-Beam Epitaxy," Applied Physics Letters, vol. 78, no. 26, pp. 4068-4070, American Institute of Physics (AIP), Jun 2001.
The definitive version is available at https://doi.org/10.1063/1.1379787
Mechanical and Aerospace Engineering
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© 2001 American Institute of Physics (AIP), All rights reserved.
25 Jun 2001