The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts
A strong correlation has been found between the electrical, compositional and structural properties of the polysilicon contact and its interface with the heavily doped pol isi 1-emitter of a transistor. The integrity and thickness of the oxide interface is a major factor for improving the observed performance. Transistors for which the polysilicon was also the diffusion source for the emitter were studied.
D. E. Burk et al., "The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts," Proceedings of the Materials Research Society Symposium (1985, Boston, MA), vol. 54, Materials Research Society, Feb 1985.
The definitive version is available at https://doi.org/10.1557/PROC-54-761
Materials Research Society Symposium E-Thin Films-Interfaces and Phenomena (1985: Dec. 2-6, Boston, MA)
Materials Science and Engineering
Article - Conference proceedings
© 1985 Materials Research Society, All rights reserved.
01 Feb 1985