Microstructure and Grain-boundary Effect on Electrical Properties of Gadolinium-doped Ceria
The microstructural evolution and grain-boundary influence on electrical properties of Ce0.90Gd0.10O1.95 were studied. the nanoscale powders synthesized from a semibatch reactor exhibited 50% green density and 92% sintering density at 1200°C (∼200°C lower than previous studies). Impedance spectra as a function of temperature and grain size were analyzed. the Ce0.90Gd0.10O1.95 with finest grain size possessed highest overall grain-boundary resistance; this contribution was eliminated at temperatures >600°C, regardless of grain size. the grain conductivity was independent of grain size and was dependent on temperature with two distinct regimes, indicative of the presence of Gd′Ce−Vo∘∘ complexes that dissociated at a critical temperature of ∼580°C. the activation energy for complex dissociation was ∼0.1 eV; the value for the grain-boundary was ∼1.2eV, which was size independent.
X. Zhou et al., "Microstructure and Grain-boundary Effect on Electrical Properties of Gadolinium-doped Ceria," Journal of the American Ceramic Society, Wiley-Blackwell, Dec 2004.
The definitive version is available at https://doi.org/10.1111/j.1151-2916.2002.tb00349.x
Materials Science and Engineering
Keywords and Phrases
Cerium/Cerium Compounds; Grain Boundaries; Conductivity; Microstructure
International Standard Serial Number (ISSN)
Article - Journal
© 2004 Wiley-Blackwell, All rights reserved.
01 Dec 2004