Title

Thin-Film Capacitor Technology for Improving Broadband Power Integrity

Abstract

Thin-film capacitor (TF cap) technology together with chip-scale packaging (CSP) is studied as a method to achieve broadband power integrity into the gigahertz region. TF cap structures integrated into board-level supply interconnects are analyzed with transmission-line techniques. The behavior of the resulting superlow-impedance transmission lines (SLITs) is illustrated, and the role of TF metal resistance in reducing resonances is highlighted. A single 10-mil-wide-by-100-mil-long SLIT bypass structure supplying a CSP die provides an effective impedance through 6 GHz as low as 2 Ω. The preliminary measured results from TF caps and SLITs realized on low-temperature cofired ceramic boards are reported, and issues for practical realizations are discussed.

Department(s)

Materials Science and Engineering

Comments

This work was supported by the Honeywell Federal Manufacturing and Technologies, LLC, which is operated for the United States Department of Energy under Contract DE-NA-0002839.

Keywords and Phrases

Capacitor; Low-Temperature Co-Fired Ceramic (LTCC); Power Integrity; Superlow-Impedance Transmission Line (SLIT); Thin Film (TF); Transmission Line

International Standard Serial Number (ISSN)

2156-3950

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2019 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Jul 2019

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