Thin-Film Capacitor Technology for Improving Broadband Power Integrity
Thin-film capacitor (TF cap) technology together with chip-scale packaging (CSP) is studied as a method to achieve broadband power integrity into the gigahertz region. TF cap structures integrated into board-level supply interconnects are analyzed with transmission-line techniques. The behavior of the resulting superlow-impedance transmission lines (SLITs) is illustrated, and the role of TF metal resistance in reducing resonances is highlighted. A single 10-mil-wide-by-100-mil-long SLIT bypass structure supplying a CSP die provides an effective impedance through 6 GHz as low as 2 Ω. The preliminary measured results from TF caps and SLITs realized on low-temperature cofired ceramic boards are reported, and issues for practical realizations are discussed.
W. B. Kuhn et al., "Thin-Film Capacitor Technology for Improving Broadband Power Integrity," IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 9, no. 7, pp. 1319 - 1327, Institute of Electrical and Electronics Engineers (IEEE), Jul 2019.
The definitive version is available at https://doi.org/10.1109/TCPMT.2019.2901569
Materials Science and Engineering
Center for High Performance Computing Research
Keywords and Phrases
Capacitor; Low-Temperature Co-Fired Ceramic (LTCC); Power Integrity; Superlow-Impedance Transmission Line (SLIT); Thin Film (TF); Transmission Line
International Standard Serial Number (ISSN)
Article - Journal
© 2019 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Jul 2019