High-Temperature Electrical Conductivity of Aluminium Nitride
The electrical conductivity of hot-pressed polycrystalline aluminium nitride doped with oxygen and beryllium was measured as a function of temperature from 800 to 1200° C and over a range of nitrogen partial pressure from 102 to 105 Pa. The effect of beryllium dopant, the independence of conductivity from nitrogen partial pressure, and the observed activation energy suggested extrinsic electronic species or aluminium vacancies as charge carriers. Polarization measurements made with one electrode blocking to ionic species indicated that the aluminium nitride with oxygen impurity was an extrinsic electronic conductor.
V. Richards et al., "High-Temperature Electrical Conductivity of Aluminium Nitride," Journal of Materials Science, vol. 22, no. 9, pp. 3385 - 3390, Kluwer Academic Publishers, Sep 1987.
The definitive version is available at https://doi.org/10.1007/BF01161209
Materials Science and Engineering
Keywords and Phrases
Crystals - Impurities; Electric Conductivity - High Temperature Effects; Extrinsic Electronic Conductor; Ionic Conductor; Polarization Measurements; Aluminum Compounds
International Standard Serial Number (ISSN)
Article - Journal
© 1987 Kluwer Academic Publishers, All rights reserved.
01 Sep 1987