In an effort to develop transmission lines with higher energy storage capabilities for compact pulsed power applications, the University of Missouri-Rolla (UMR) and the University of New Mexico (UNM) have undertaken a collaborative approach to developing and studying ceramic dielectrics. At UMR, the electrical breakdown strength (BDS) of TiO2-based materials is investigated for high energy density applications. The results of research to-date show that dense titania ceramics with nanocrystalline grain size (~200 nm) exhibit significantly higher BDS as compared to ceramics made using coarse grain materials. Processing-microstructure-property relationships in TiO2 systems are found to play a role with respect to increasing the BDS. At UNM, a pulsed power system is being assembled to perform BDS studies of the ceramic materials produced at UMR. Electromagnetic simulations in support of this work will also presented. The long-term aim of this research is to enable the fabrication of large sizes of high energy density ceramics for use in pulsed power systems.
Y. Ye et al., "Influence of Nanocrystalline Grain Size on the Breakdown Strength of Ceramic Dielectrics," Proceedings of the 14th IEEE International Pulsed Power Conference, 2003, Institute of Electrical and Electronics Engineers (IEEE), Jan 2003.
The definitive version is available at https://doi.org/10.1109/PPC.2003.1277809
14th IEEE International Pulsed Power Conference, 2003
Materials Science and Engineering
Keywords and Phrases
TiO2; University of Missouri--Rolla; University of New Mexico; Ceramics; Coarse Grain Materials; Dielectric Materials; Electric Breakdown; Electrical Breakdown Strength; Electromagnetic Simulations; Energy Density; Energy Storage Capabilities; Grain Size; Microstructure-Property; Nanocrystalline Grain Size; Nanostructured Materials; Power Transmission Lines; Pulsed Power Applications; Pulsed Power System; Pulsed Power Technology; Titania Ceramic Dielectrics; Titanium Compounds; Transmission Lines
Article - Conference proceedings
© 2003 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Jan 2003