Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films
The Si 2p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si-N bonds replace Si-O bonds as the nitrogen content of the films is increased.
R. K. Brow and C. G. Pantano, "Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films," Journal of the American Ceramic Society, vol. 69, no. 4, pp. 314 - 316, John Wiley & Sons, Apr 1986.
The definitive version is available at https://doi.org/10.1111/j.1151-2916.1986.tb04738.x
Materials Science and Engineering
National Science Foundation (U.S.)
International Standard Serial Number (ISSN)
Article - Journal
© 1986 John Wiley & Sons, All rights reserved.
01 Apr 1986
Supported by the National Science Foundation under Grant No. DMR–8119476