Oxidation Resistant Sol-gel Derived Silicon Oxynitride Thin Films
Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.
R. K. Brow and C. G. Pantano, "Oxidation Resistant Sol-gel Derived Silicon Oxynitride Thin Films," Applied Physics Letters, American Institute of Physics (AIP), Jan 1986.
The definitive version is available at https://doi.org/10.1063/1.96750
Materials Science and Engineering
International Standard Serial Number (ISSN)
Article - Journal
© 1986 American Institute of Physics (AIP), All rights reserved.
01 Jan 1986