"A discrete, deterministic, mathematical model is developed for the neutral bulk base region of graded base devices which accounts for both the effects of recombination and the built-in electric field in the bulk base region at low, intermediate, and moderate current/injection levels. This model is applied to a study of neutron radiation effects in double diffused silicon transistors. Exact expressions are developed for the injected emitter, base and collector currents, the base recombination term, and the ratio of base current increase to collector current decrease as functions of device geometry, impurity profile, and neutron fluence. Neutron-induced current gain degradation is demonstrated to be dominated at low and intermediate current/injection levels by a neutron-induced increase in space-charge region recombination (reduction in emitter efficiency), and at moderate and high current/injection levels by a neutron-induced increase in neutral base region recombination (reduction in base recombination term). A method of accurately predicting device current-voltage characteristics from low to moderate current/injection levels (including "bendaway") is presented. Damage coefficients for the neutron-induced collector current decrease and for the neutron-induced bulk base recombination current increase are computed"--Abstract, page ii.
Goben, C. A.
Bolon, Albert E., 1939-2006
Venteicher, LeRoy P.
Electrical and Computer Engineering
M.S. in Electrical Engineering
U.S. Atomic Energy Commission
University of Missouri--Rolla
viii, 79 pages, A8, B9, C9
© 1970 Jonas Bereisa, Jr, All rights reserved.
Thesis - Open Access
Library of Congress Subject Headings
Electric fields -- Measurement -- Mathematical models
Semiconductors -- Recombination -- Mathematical models
Transistors -- Effect of radiation on
Semiconductors -- Recombination
Print OCLC #
Electronic OCLC #
Link to Catalog Record
Bereisa, Jonas Jr., "A mathematical model for the neutron dependence of neutral base region recombination" (1970). Masters Theses. 7157.