Masters Theses
Abstract
"A transient peak was observed for MOSFET devices when measuring the dynamic capacitance versus applied gate voltage for various configurations at low frequencies. This peak is absent in conventional steady-state ac measurements. Since the peak is also absent in high grade devices and at high frequencies a possible explanation in terms of surface state traps is discussed for the observed phenomena"--Abstract, page ii.
Advisor(s)
Dillman, Norman G., 1938-2010
Committee Member(s)
Levine, Norman E.
Bolander, Richard W., 1940-
Department(s)
Electrical and Computer Engineering
Degree Name
M.S. in Electrical Engineering
Sponsor(s)
National Science Foundation (U.S.)
Publisher
University of Missouri at Rolla
Publication Date
1968
Pagination
v, 76 pages
Rights
© 1968 Marion Wendell Tucker, All rights reserved.
Document Type
Thesis - Open Access
File Type
text
Language
English
Subject Headings
Electric power system stability
Metal oxide semiconductor field-effect transistors
Semiconductors -- Testing
Thesis Number
T 2160
Print OCLC #
5999790
Electronic OCLC #
794229612
Link to Catalog Record
Recommended Citation
Tucker, Marion Wendell, "Dynamic capacitance of metal-oxide-semiconductor field-effect transistors" (1968). Masters Theses. 5184.
https://scholarsmine.mst.edu/masters_theses/5184
