"A transient peak was observed for MOSFET devices when measuring the dynamic capacitance versus applied gate voltage for various configurations at low frequencies. This peak is absent in conventional steady-state ac measurements. Since the peak is also absent in high grade devices and at high frequencies a possible explanation in terms of surface state traps is discussed for the observed phenomena"--Abstract, page ii.
Dillman, Norman G., 1938-2010
Levine, Norman E.
Bolander, Richard W., 1940-
Electrical and Computer Engineering
M.S. in Electrical Engineering
National Science Foundation (U.S.)
University of Missouri at Rolla
v, 76 pages
© 1968 Marion Wendell Tucker, All rights reserved.
Thesis - Open Access
Electric power system stability
Metal oxide semiconductor field-effect transistors
Semiconductors -- Testing
Print OCLC #
Electronic OCLC #
Link to Catalog Record
Tucker, Marion Wendell, "Dynamic capacitance of metal-oxide-semiconductor field-effect transistors" (1968). Masters Theses. 5184.