"A mathematical expression for the driving point impedance of a junction diode at high injection levels is developed. To evaluate the impedance versus frequency characteristic of a diode, it is necessary to know the minority carrier lifetime as a function of injection level and doping density in the base (lightly doped) region, the junction area, and the base width. The interesting characteristic of the diode impedance at high injection levels is the inductive reactance displayed by the diode.
The expression is developed by solving the differential equation for charge flow in the base region of a diode assuming space-charge neutrality and equality of electron and hole densities. Solution of the differential equation results in an expression for the carrier densities in the base region. Possessing the carrier density, the voltage across the diode and the current through the diode can be found.
Three general computer programs are given in the appendices to implement the evaluation of the impedance expression.
Values obtained from the impedance expression for a germanium and silicon diode are compared to experimental results. The calculated and experimental data for the germanium diode were in agreement, but the comparison for the silicon diode was poor. The inaccurate results obtained for the silicon diode were attributed to an inability to determine the necessary diode parameters with the equipment available. Experiments were performed to demonstrate this inability"--Abstract, page ii.
Goben, C. A.
Carson, Ralph S.
Dillman, Norman G., 1938-2010
Gerson, Robert, 1923-2013
Electrical and Computer Engineering
M.S. in Electrical Engineering
University of Missouri at Rolla
vi, 82 pages
© 1967 John E. Lundy, All rights reserved.
Thesis - Open Access
Impedance (Electricity) -- Mathematical models
Impedance (Electricity) -- Computer simulation
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Electronic OCLC #
Link to Catalog Record
Lundy, John E., "Small-signal impedance of a junction diode at high injection levels" (1967). Masters Theses. 3110.