"Epitaxial barium titanate films were deposited on single crystal substrates of (100) SrTiO3 under hydrothermal conditions at 150°C by reacting fine TiO2 particles with an aqueous solution of Ba(OH)2. The nucleation and growth as well as the structure and composition of the films were investigated using structural characterization techniques and surface science techniques. The growth kinetics of the film determined by Auger electron spectroscopy supports an island (Volmer-Weber) growth model. X-ray photoelectron spectroscopy data indicate a significant concentration of H2O and OH- groups incorporated into the film, which increased with the concentration of Ba(OH)2 in the solution. The mechanism of nucleation and growth of the films is discussed.
The nature and concentration of hydroxyl groups incorporated into the films were investigated using X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), The kinetics of exchange between hydrogen and deuterium (D) for OH- incorporated into the film was measured following treatments with D2O. FTIR data indicated a significant concentration of surface OH- groups, but a sharply defined peak that can be attributed to OH- groups in the BaTiO3 lattice was absent. The kinetics of the exchange reaction between OH- and OD- was found to be dependent on the total reaction time as well as on the time interval for treatments of different durations. The concentration of OH groups replaced by OD decreased with time of reaction, but for a given reaction time, the rate of exchange was slower for short duration reactions and faster for longer duration runs. Preliminary results of deposition of BaTiO3 on Si are discussed"--Abstract, page iv.
Rahaman, M. N., 1950-
Blum, Frank D.
Materials Science and Engineering
M.S. in Ceramic Engineering
University of Missouri--Rolla
xii, 66 pages
© 2003 Sandeep Patil, All rights reserved.
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Thin films -- Growth
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Patil, Sandeep K., "Hydrothermal deposition of barium titanate heteroepitaxial thin films" (2003). Masters Theses. 2369.
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