Masters Theses

Abstract

"The present study investigates the effects of magnetic field orientation, magnetic field strength and growth rate on the dopant segregation in semiconductor crystals, and presents results of dopant composition in the crystal and in the melt at several different times during growth for several combinations of process parameters. The crystal's lateral segregation depends on the magnetic field's orientation and strength while the axial segregation depends on the magnetic field's strength and growth rate. If either convective or diffusive transport truly dominates, then the crystal's dopant distribution is laterally uniform. The axial distribution in the crystal approaches the well-mixed limit if the melt motion is strong and the growth rate is slow, and the distribution approaches the diffusion-controlled limit if the melt motion is slow and the growth rate is fast. The deviations of the dopant distribution in the crystal from lateral uniformity and from the classical limits are quantified for several combinations of process parameters"--Abstract, page iv.

Advisor(s)

Ma, Nancy

Committee Member(s)

Drallmeier, J. A.
Carroll, Douglas R.

Department(s)

Mechanical and Aerospace Engineering

Degree Name

M.S. in Mechanical Engineering

Publisher

University of Missouri--Rolla

Publication Date

Fall 2000

Pagination

ix, 61 pages

Note about bibliography

Includes bibliographical references (pages 33-34).

Rights

© 2000 Julie Marie Hirtz, All rights reserved.

Document Type

Thesis - Restricted Access

File Type

text

Language

English

Thesis Number

T 7730

Print OCLC #

45665417

Electronic OCLC #

1105583495

Link to Catalog Record

Electronic access to the full-text of this document is restricted to Missouri S&T users. Otherwise, request this publication directly from Missouri S&T Library or contact your local library.

http://laurel.lso.missouri.edu/record=b4497232~S5

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