A Novel Thin Film Transistor Using Double Amorphous Silicon Active Layer

Jong Hyuni Choi
Chang-Soo Kim, Missouri University of Science and Technology
Byung Cheon Lim
Jin Jang

This document has been relocated to http://scholarsmine.mst.edu/ele_comeng_facwork/816

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We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.