Proton Damage in GaAs Solar Cells

John W. Wilson, Missouri University of Science and Technology
G. H. Walker
R. A. Outlaw

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A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.