Modeling Yield of Carbon-Nanotube/Silicon-Nanowire FET-Based Nanoarray Architecture with H-hot Addressing Scheme

Shanrui Zhang
Minsu Choi, Missouri University of Science and Technology
Nohpill Park

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With molecular-scale materials, devices and fabrication techniques recently being developed, high-density computing systems in the nanometer domain emerge. An array-based nanoarchitecture has been recently proposed based on nanowires such as carbon nanotubes (CNTs) and silicon nanowires (SiNWs). High-density nanoarray-based systems consisting of nanometer-scale elements are likely to have many imperfections; thus, defect-tolerance is considered one of the most significant challenges. In this paper we propose a probabilistic yield model for the array-based nanoarchitecture. The proposed yield model can be used (1) to accurately estimate the raw and net array densities, and (2) to design and optimize more defect and fault-tolerant systems based on the array-based nanoarchitecture. As a case study, the proposed yield model is applied to the defect-tolerant addressing scheme called h-hot addressing and simulation results are discussed.