The Influence of PCl 3 on Planarisation and Selectivity of InP Regrowth by Atmospheric Pressure MOVPE
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The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the  direction and enhancing growth in the  directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed