We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.
J. H. Choi et al., "A Novel Thin Film Transistor Using Double Amorphous Silicon Active Layer," IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), Jan 1998.
The definitive version is available at https://doi.org/10.1109/16.711377
Electrical and Computer Engineering
Chemical and Biochemical Engineering
Keywords and Phrases
Si:H; Cl-Si:H; Amorphous Semiconductors; Double Amorphous Silicon Stacked Active Layer; Elemental Semiconductors; Leakage Currents; Off-State Photo-Leakage Current; Silicon; Thin Film Transistor; Thin Film Transistors
International Standard Serial Number (ISSN)
Article - Journal
© 1998 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Jan 1998