Abstract

Metal organic chemical vapor deposition (MOCVD) growth of nickel-doped zinc oxide (Ni-doped ZnO) thin films on sapphire was investigated. The structural and optical properties were studied. The samples were grown at two substrate temperatures (i.e., 450 and 550°C) and at three chamber pressures (22, 30 and 100 Torr). The Ni-doped ZnO samples showed the (002) hexagonal crystal structure with signs of secondary phases in X-ray diffraction (XRD) measurements. However, different XRD peak intensities were observed for these samples at different growth conditions with the same Ni flow rate injection to the reaction chamber. The samples grown at different growth conditions had different optical absorption spectra. Results prove that the growth at a low pressure and temperatures close to the decomposition temperature of the precursors resulted in an optimum dopant incorporation, sharp absorption band edges, and good crystalline quality.

Department(s)

Electrical and Computer Engineering

Comments

National Science Foundation, Grant CMMI 1560834

Keywords and Phrases

Metal organic chemical vapor deposition (MOCVD); Nickel-doped zinc oxide; Transition metal doping

International Standard Serial Number (ISSN)

2578-062X; 2578-0611

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Engineered Science Publisher, All rights reserved.

Publication Date

01 Jun 2020

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