XPS Characterization of Al2O3/ZnO Ultrathin Films Grown by Atomic Layer Deposition
Abstract
The near-surface compositional properties of double-layer Al2O3/ZnO ultrathin films, grown on the n-type GaAs substrate using the atomic layer deposition (ALD) technique, are analyzed by means of high-resolution x-ray photoelectron spectroscopy (XPS). This structure has been used as the dielectric or the passivation layer in microelectronic devices, such as metal-oxide-semiconductor (MOS) capacitors, field-effect transistors, and Schottky junctions. The XPS spectra of double-layer Al2O3/ZnO thin films were obtained using monochromatic Al kα monochromatic radiation at 1486.6 eV and included an overall survey scan, in addition to the high-resolution spectra of Zn 2p, Al 2p, O 1s, Ga 2p, and As 3d.
Recommended Citation
A. Ghods et al., "XPS Characterization of Al2O3/ZnO Ultrathin Films Grown by Atomic Layer Deposition," Surface Science Spectra, vol. 27, no. 2, article no. 024012, American Institute of Physics; American Vacuum Society, Dec 2020.
The definitive version is available at https://doi.org/10.1116/6.0000585
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
1520-8575; 1055-5269
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2024 American Institute of Physics; American Vacuum Society, All rights reserved.
Publication Date
01 Dec 2020
