Abstract
A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20-4.78 possess the high crystalline quality. The temperature-dependent SE (20-300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ϵ2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.
Recommended Citation
Y. Qian and Y. Liang and X. Luo and K. He and W. Sun and H. H. Lin and D. N. Talwar and T. S. Chan and I. Ferguson and L. Wan and Q. Yang and Z. C. Feng, "Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of Insb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition," Advances in Materials Science and Engineering, vol. 2018, article no. 5016435, Hindawi, Jan 2018.
The definitive version is available at https://doi.org/10.1155/2018/5016435
Department(s)
Electrical and Computer Engineering
Publication Status
Open Access
International Standard Serial Number (ISSN)
1687-8442; 1687-8434
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2024 The Authors, All rights reserved.
Creative Commons Licensing
This work is licensed under a Creative Commons Attribution 4.0 License.
Publication Date
01 Jan 2018