Abstract

A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20-4.78 possess the high crystalline quality. The temperature-dependent SE (20-300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ϵ2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

Department(s)

Electrical and Computer Engineering

Publication Status

Open Access

International Standard Serial Number (ISSN)

1687-8442; 1687-8434

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2024 The Authors, All rights reserved.

Creative Commons Licensing

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.

Publication Date

01 Jan 2018

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