Abstract
The optical properties and film quality for a series of high-In composition InGaN films grown on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized by using high resolution X-ray diffraction (HRXRD), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman scattering spectroscopy (RSS). The In composition is evaluated by analyzing the RBS and PL emission spectra. The XPS measurements revealed the diffusion of Zn atoms from the substrate into InGaN films. All the analyses of experimental measurements have shown that the growth temperature played an important role in indium composition as well as of film quality. An optimum growth temperature is a necessary condition for obtaining high-quality films.
Recommended Citation
M. Tian and Y. D. Qian and C. Zhang and L. Li and S. D. Yao and I. T. Ferguson and D. N. Talwar and J. Y. Zhai and D. H. Meng and K. Y. He and L. Y. Wan and Z. C. Feng, "Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition," Optical Materials Express, vol. 8, no. 10, pp. 3184 - 3196, Optica Publishing Group, Jan 2018.
The definitive version is available at https://doi.org/10.1364/OME.8.003184
Department(s)
Electrical and Computer Engineering
Publication Status
Open Access
International Standard Serial Number (ISSN)
2159-3930
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2024 Optica Publishing Group, All rights reserved.
Creative Commons Licensing
This work is licensed under a Creative Commons Attribution 4.0 License.
Publication Date
01 Jan 2018
Comments
National Natural Science Foundation of China, Grant 51868002