Abstract

The optical properties and film quality for a series of high-In composition InGaN films grown on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized by using high resolution X-ray diffraction (HRXRD), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman scattering spectroscopy (RSS). The In composition is evaluated by analyzing the RBS and PL emission spectra. The XPS measurements revealed the diffusion of Zn atoms from the substrate into InGaN films. All the analyses of experimental measurements have shown that the growth temperature played an important role in indium composition as well as of film quality. An optimum growth temperature is a necessary condition for obtaining high-quality films.

Department(s)

Electrical and Computer Engineering

Publication Status

Open Access

Comments

National Natural Science Foundation of China, Grant 51868002

International Standard Serial Number (ISSN)

2159-3930

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2024 Optica Publishing Group, All rights reserved.

Creative Commons Licensing

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.

Publication Date

01 Jan 2018

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