Abstract
InSb thin films were grown on GaAs substrates by metal organic chemical vapor deposition (MOCVD) and investigated by temperature-dependent spectroscopic ellipsometry (TD-SE). The refractive index, extinction coefficient, and dielectric function of the InSb films were extracted. The variation of critical point energies (E 1 , E 1 +Δ 1 , E 2 , E1') related to the excited state transitions of InSb and the second energy derivatives of the dielectric function at different temperatures showed that the InSb thin film had high electrical and optical stability at the evaluated temperatures. TD-SE analysis revealed a temperature range suitable for the use of InSb/GaAs-based devices. Beyond 250°C, InSb was heavily oxidized to form a thin In-O layer, causing a pronounced change in the optical constants. The results indicated that optimized InSb thin films grown on GaAs by MOCVD possess good optical and structural properties.
Recommended Citation
Y. Liang et al., "Investigation of the Optical Properties of Insb Thin Films Grown on Gaas by Temperature-Dependent Spectroscopic Ellipsometry," Journal of Applied Spectroscopy, vol. 86, no. 2, pp. 276 - 282, Springer, May 2019.
The definitive version is available at https://doi.org/10.1007/s10812-019-00812-6
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
dielectric function; extinction coefficient; InSb thin fi lm; refractive index; spectroscopic ellipsometry
International Standard Serial Number (ISSN)
0021-9037
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Springer, All rights reserved.
Publication Date
15 May 2019
Comments
National Natural Science Foundation of China, Grant 61367004