A Review of Earth Abundant Zno-Based Materials for Thermoelectric and Photovoltaic Applications
Abstract
Zinc oxide (ZnO) is an earth abundant wide bandgap semiconductor of great interest in the recent years. ZnO has many unique properties, such as non-toxic, large direct bandgap, high exciton binding energy, high transparency in visible and infrared spectrum, large Seebeck coefficient, high thermal stability, high electron diffusivity, high electron mobility, and availability of various nanostructures, making it a promising material for many applications. The growth techniques of ZnO is reviewed in this work, including sputtering, PLD, MOCVD and MBE techniques, focusing on the crystalline quality, electrical and optical properties. The problem with p-type doping ZnO is also discussed, and the method to improve p-type doping efficiency is reviewed. This paper also summarizes the current state of art of ZnO in thermoelectric and photovoltaic applications, including the key parameters, different device structures, and future development.
Recommended Citation
Y. Wang et al., "A Review of Earth Abundant Zno-Based Materials for Thermoelectric and Photovoltaic Applications," Proceedings of SPIE - The International Society for Optical Engineering, vol. 10533, article no. 105331R, Society of Photo-optical Instrumentation Engineers, Jan 2018.
The definitive version is available at https://doi.org/10.1117/12.2302467
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
fabrication; p-type doping; photovoltaic; thermoelectric; ZnO
International Standard Book Number (ISBN)
978-151061551-9
International Standard Serial Number (ISSN)
1996-756X; 0277-786X
Document Type
Article - Conference proceedings
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2024 Society of Photo-optical Instrumentation Engineers, All rights reserved.
Publication Date
01 Jan 2018