Abstract

In this work, we clarify the underlying physics and the acceptor ionization process in the In-Mg co-doping GaN. The fundamental understandings are also applicable for other co-doping nitride systems. We show the effective acceptors ionization stems mainly from the band structure tuning effect of the 4d orbitals of In atoms. In addition, temperature dependent defect-related photoluminescence analysis was proposed to examine the energy position of Mg impurity levels, which is crucially important in the design for high p-doping. Finally, a hole concentration, which is nearly one order of magnitude higher than what is typically achievable by direct Mg-doping, was achieved.

Department(s)

Electrical and Computer Engineering

Comments

National Key Research and Development Program of China, Grant 2016YFB0400102

Keywords and Phrases

Co-doping; GaN; Hole concentration; P-doping

International Standard Serial Number (ISSN)

2578-062X; 2578-0611

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Engineered Science Publisher, All rights reserved.

Publication Date

01 Jun 2019

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