Abstract
In this work, we clarify the underlying physics and the acceptor ionization process in the In-Mg co-doping GaN. The fundamental understandings are also applicable for other co-doping nitride systems. We show the effective acceptors ionization stems mainly from the band structure tuning effect of the 4d orbitals of In atoms. In addition, temperature dependent defect-related photoluminescence analysis was proposed to examine the energy position of Mg impurity levels, which is crucially important in the design for high p-doping. Finally, a hole concentration, which is nearly one order of magnitude higher than what is typically achievable by direct Mg-doping, was achieved.
Recommended Citation
Z. Liu et al., "Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in Gan Via Mg Co-Doped with 4d-Element (In)," ES Materials and Manufacturing, vol. 4, pp. 25 - 30, Engineered Science Publisher, Jun 2019.
The definitive version is available at https://doi.org/10.30919/esmm5f209
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Co-doping; GaN; Hole concentration; P-doping
International Standard Serial Number (ISSN)
2578-062X; 2578-0611
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Engineered Science Publisher, All rights reserved.
Publication Date
01 Jun 2019
Comments
National Key Research and Development Program of China, Grant 2016YFB0400102