Abstract
The transient behavior for four different types of TVS (non-snapback, snapback, spark gap, varistor) is modeled using the same modeling framework. By a 10 ns VF-TLP, the quasi-static I-V curve and the transient turn-on are captured and modeled in ADS. The models are applied in a SEED simulation to investigate the strengths and weaknesses of the modeling frame.
Recommended Citation
L. Shen et al., "Tvs Devices Transient Behavior Modeling Framework and Application to Seed," Electrical Overstress/Electrostatic Discharge Symposium Proceedings, Institute of Electrical and Electronics Engineers, Sep 2019.
The definitive version is available at https://doi.org/10.23919/eos/esd.2019.8869992
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-158537311-6
International Standard Serial Number (ISSN)
0739-5159
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Sep 2019
Comments
National Science Foundation, Grant IIP-1440110