Abstract
Anomalous Hall effect was observed at room temperature in MOCVD-grown GaGdN from a (TMHD)3Gd source, which can contain oxygen in its organic ligand. GaN, and GaGdN grown using a Cp3Gd precursor which does not contain oxygen only showed the ordinary Hall effect. This indicates that oxygen could have a role in magnetic properties of GaGdN. The relationship between the anomalous Hall conductivity and longitudinal conductivity indicated that metallic conduction, hopping of carriers, and scattering-independent mechanisms are likely responsible for the ferromagnetism. However, this still requires further clarification.
Recommended Citation
V. G. Saravade et al., "Room Temperature Ferromagnetism in Gadolinium-Doped Gallium Nitride," MRS Advances, vol. 3, no. 3, pp. 159 - 164, Springer; Materials Research Society, Jan 2018.
The definitive version is available at https://doi.org/10.1557/adv.2018.11
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
ferromagnetic; nitride; spintronic
International Standard Serial Number (ISSN)
2059-8521
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Springer; Materials Research Society, All rights reserved.
Publication Date
01 Jan 2018