Abstract

In this paper, Schottky junction solar cells fully based on Al0.3Ga0.7As with optical band gap energy of 1.8 eV are designed, fabricated, and characterized. In solar cells based on AlGaAs/GaAs heterostructure, AlGaAs is mostly used as window or electron barrier layer, while GaAs is used as active photon absorbing layer. This work is among the first reports of AlGaAs based Schottky solar cells. AlGaAs/GaAs heterojunction grown using molecular beam epitaxy (MBE) is used for fabrication of photovoltaic devices. Photovoltaic properties of solar cells are reported, along with experimental details of device fabrication and characterization. The optimized bandgap energy of 1.8eV makes this structure suitable for use in III-V//Si wide-bandgap multi-junction solar cells.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

III-V semiconductors; multi-junction structures; Schottky junction solar cells

International Standard Book Number (ISBN)

978-172810494-2

International Standard Serial Number (ISSN)

0160-8371

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.

Publication Date

01 Jun 2019

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