Abstract
In this paper, Schottky junction solar cells fully based on Al0.3Ga0.7As with optical band gap energy of 1.8 eV are designed, fabricated, and characterized. In solar cells based on AlGaAs/GaAs heterostructure, AlGaAs is mostly used as window or electron barrier layer, while GaAs is used as active photon absorbing layer. This work is among the first reports of AlGaAs based Schottky solar cells. AlGaAs/GaAs heterojunction grown using molecular beam epitaxy (MBE) is used for fabrication of photovoltaic devices. Photovoltaic properties of solar cells are reported, along with experimental details of device fabrication and characterization. The optimized bandgap energy of 1.8eV makes this structure suitable for use in III-V//Si wide-bandgap multi-junction solar cells.
Recommended Citation
A. Ghods et al., "Design and Fabrication of Algaas-Based 1.8ev Schottky Solar Cell," Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 233 - 237, article no. 8980472, Institute of Electrical and Electronics Engineers, Jun 2019.
The definitive version is available at https://doi.org/10.1109/PVSC40753.2019.8980472
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
III-V semiconductors; multi-junction structures; Schottky junction solar cells
International Standard Book Number (ISBN)
978-172810494-2
International Standard Serial Number (ISSN)
0160-8371
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jun 2019