Abstract
Nano selective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.
Recommended Citation
R. Puybaret and D. J. Rogers and Y. E. Gmili and S. Sundaram and M. B. Jordan and X. Li and G. Patriarche and F. H. Teherani and E. V. Sandana and P. Bove and P. L. Voss and R. McClintock and M. Razeghi and I. Ferguson, "Nanoselective Area Growth of Defect-free Thick Indium-rich InGaN Nanostructures on Sacrificial ZnO Templates," Nanotechnology, vol. 28, no. 19, article no. 195304, IOP Publishing, Apr 2017.
The definitive version is available at https://doi.org/10.1088/1361-6528/aa6a43
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
InGaN; metal organic vapor phase epitaxy-MOVPE; nano selective area growth-NSAG; zinc oxide-ZnO
International Standard Serial Number (ISSN)
1361-6528; 0957-4484
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 IOP Publishing, All rights reserved.
Publication Date
19 Apr 2017
PubMed ID
28358724
Comments
Agence Nationale de la Recherche, Grant ANR-12-PRGE-0014-02