Abstract

Nano selective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.

Department(s)

Electrical and Computer Engineering

Comments

Agence Nationale de la Recherche, Grant ANR-12-PRGE-0014-02

Keywords and Phrases

InGaN; metal organic vapor phase epitaxy-MOVPE; nano selective area growth-NSAG; zinc oxide-ZnO

International Standard Serial Number (ISSN)

1361-6528; 0957-4484

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 IOP Publishing, All rights reserved.

Publication Date

19 Apr 2017

PubMed ID

28358724

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