Photocharge-Modulated Passive Intermodulation on Ag₂O/Ag Junction in High-Power Microwave Devices
Abstract
This letter studies the photocharge-modulated passive intermodulation (PIM) effect on the Ag2O/Ag contact junction. It is demonstrated that the photocharge with the parasitic parameters on the contact junction can modulate the electron transport process and make the PIM components changed with photoillumination. The linear RC constant can change the nonlinear current strength, under the periodical photostimulation, and PIM components will vary with the photopulses. In the experiment, by using a specially designed coaxial fixture to measure the PIM response with RC components on the contact junction, a semianalytical model for this photoeffect-modulated contact PIM is demonstrated.
Recommended Citation
X. Chen et al., "Photocharge-Modulated Passive Intermodulation on Ag₂O/Ag Junction in High-Power Microwave Devices," IEEE Microwave and Wireless Components Letters, vol. 30, no. 3, pp. 268 - 271, Institute of Electrical and Electronics Engineers (IEEE), Mar 2020.
The definitive version is available at https://doi.org/10.1109/LMWC.2020.2971829
Department(s)
Electrical and Computer Engineering
Research Center/Lab(s)
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Contact Nonlinearity; Passive Intermodulation (PIM); Photocharge Modulation; Silver Oxide
International Standard Serial Number (ISSN)
1531-1309
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2020 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Mar 2020
Comments
This work was supported in part by the National Science Foundation for Young Scientists of China under Grant 61901296, in part by the China Postdoctoral Science Special Foundation under Grant 2019TQ0224, and in part by the China Postdoctoral Science General Foundation under Grant 2019M661018.