Photocharge-Modulated Passive Intermodulation on Ag₂O/Ag Junction in High-Power Microwave Devices
This letter studies the photocharge-modulated passive intermodulation (PIM) effect on the Ag2O/Ag contact junction. It is demonstrated that the photocharge with the parasitic parameters on the contact junction can modulate the electron transport process and make the PIM components changed with photoillumination. The linear RC constant can change the nonlinear current strength, under the periodical photostimulation, and PIM components will vary with the photopulses. In the experiment, by using a specially designed coaxial fixture to measure the PIM response with RC components on the contact junction, a semianalytical model for this photoeffect-modulated contact PIM is demonstrated.
X. Chen et al., "Photocharge-Modulated Passive Intermodulation on Ag₂O/Ag Junction in High-Power Microwave Devices," IEEE Microwave and Wireless Components Letters, vol. 30, no. 3, pp. 268-271, Institute of Electrical and Electronics Engineers (IEEE), Mar 2020.
The definitive version is available at https://doi.org/10.1109/LMWC.2020.2971829
Electrical and Computer Engineering
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Contact Nonlinearity; Passive Intermodulation (PIM); Photocharge Modulation; Silver Oxide
International Standard Serial Number (ISSN)
Article - Journal
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01 Mar 2020