An Approach to Characterize Behavior of Multiport ICs under ESD Stress
ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V.
O. H. Izadi et al., "An Approach to Characterize Behavior of Multiport ICs under ESD Stress," Proceedings of the 41st Annual Electrical Overstress/Electrostatic Discharge Symposium (2019, Riverside, CA), ESD Association, Sep 2019.
The definitive version is available at https://doi.org/10.23919/EOS/ESD.2019.8870004
41st Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2019 (2019: Sep. 15-20, Riverside, CA)
Electrical and Computer Engineering
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Integrated Circuits; Timing Circuits, ESD Stress; Input and Outputs; Multi-Port; Output Voltages; RF Switch, Electrostatic Devices
International Standard Book Number (ISBN)
International Standard Serial Number (ISSN)
Article - Conference proceedings
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01 Sep 2019