Title

An Approach to Characterize Behavior of Multiport ICs under ESD Stress

Abstract

ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V.

Meeting Name

41st Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2019 (2019: Sep. 15-20, Riverside, CA)

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Electromagnetic Compatibility (EMC) Laboratory

Comments

This material is based upon work supported by the National Science Foundation (NSF) under Grants IIP1440110.

Keywords and Phrases

Integrated Circuits; Timing Circuits, ESD Stress; Input and Outputs; Multi-Port; Output Voltages; RF Switch, Electrostatic Devices

International Standard Book Number (ISBN)

978-158537311-6

International Standard Serial Number (ISSN)

0739-5159

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2019 ESD Association, All rights reserved.

Publication Date

01 Sep 2019

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