Modeling of through-Silicon Via (TSV) with an Embedded High-Density Metal-Insulator-Metal (MIM) Capacitor
In this paper, we, for the first time, modeled and analyzed through-silicon via (TSV) with an embedded high-density metal-insulator-metal (MIM) capacitor. For 2.5-D/3-D ICs, this technology could be a potential solution to improve electrical performance. We conduct the modeling and the proposed model were compared with an electromagnetic (EM) solver, to evaluate signal and power integrity (SI/PI). The analysis was performed based on the insertion loss and impedance in the frequency range from 0.01 GHz to 20 GHz. The dominant factors to determine the electrical characteristic were analyzed depending on the frequency range. In order to model the TSVs, the concept of loop inductance was applied. Then, the capacitance and conductance between the TSVs were calculated respectively including the MIM capacitance. From the results of modeling and EM simulations, it is predicted that the TSVs are beneficial to improve SI not PI. Because the equivalent capacitance is decreased in the low frequency range under 200 MHz and the equivalent conductance is increased in the high frequency range above 200 MHz.
K. Cho and Y. Kim and S. Kim and G. Park and K. Son and H. Park and S. Kim and S. Choi and D. Kim and J. Kim, "Modeling of through-Silicon Via (TSV) with an Embedded High-Density Metal-Insulator-Metal (MIM) Capacitor," Proceedings of the 2018 IEEE Electrical Design of Advanced Packaging and Systems Symposium (2018, Chandigarh India), Institute of Electrical and Electronics Engineers (IEEE), Dec 2018.
The definitive version is available at https://doi.org/10.1109/EDAPS.2018.8680871
2018 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2018 (2018: Dec. 16-18, Chandigarh India)
Electrical and Computer Engineering
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Impedance; Insertion loss; Metal-insulator-metal (MIM) capacitor; Silicon interposer; Through-silicon via (TSV)
International Standard Book Number (ISBN)
Article - Conference proceedings
© 2018 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Dec 2018