First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs with Robust Junction Isolation
A junctionless-accumulation-mode (JAM) p-channel MOSFET is successfully implemented based on a junction-isolated bulk FinFET for the first time. The JAM devices with a fin width of 16 nm show outstanding transfer characteristics: 1) subthreshold swing (SSmin)=68 mV dec 2) drain-induced-barrier-lowering is 9 mV/V; and 3) 1ON|IOFF ratio > 1 x 106. The JAM devices with smaller fin widths or longer gate lengths give superior short-channel characteristics and higher threshold voltages (Vth) due to their enhanced gate electrostatic controllability. The reverse back bias modulates Vth and SS favorably by virtue of a body-tied device, maintaining the substrate current due to junction leakage of < 1 x 10-11 A.
T. K. Kim et al., "First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs with Robust Junction Isolation," IEEE Electron Device Letters, vol. 34, no. 12, pp. 1479-1481, Institute of Electrical and Electronics Engineers (IEEE), Dec 2013.
The definitive version is available at https://doi.org/10.1109/LED.2013.2283291
Electrical and Computer Engineering
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Junction isolation; junctionless (JL) field-effect transistor (FET); junctionless-accumulation-mode (JAM) FET; Si bulk FinFET
International Standard Serial Number (ISSN)
Article - Journal
© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Dec 2013