Title

First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs with Robust Junction Isolation

Abstract

A junctionless-accumulation-mode (JAM) p-channel MOSFET is successfully implemented based on a junction-isolated bulk FinFET for the first time. The JAM devices with a fin width of 16 nm show outstanding transfer characteristics: 1) subthreshold swing (SSmin)=68 mV dec 2) drain-induced-barrier-lowering is 9 mV/V; and 3) 1ON|IOFF ratio > 1 x 106. The JAM devices with smaller fin widths or longer gate lengths give superior short-channel characteristics and higher threshold voltages (Vth) due to their enhanced gate electrostatic controllability. The reverse back bias modulates Vth and SS favorably by virtue of a body-tied device, maintaining the substrate current due to junction leakage of < 1 x 10-11 A.

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Electromagnetic Compatibility (EMC) Laboratory

Keywords and Phrases

Junction isolation; junctionless (JL) field-effect transistor (FET); junctionless-accumulation-mode (JAM) FET; Si bulk FinFET

International Standard Serial Number (ISSN)

0741-3106

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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