Title

Analysis of High Frequency Characteristics of Power Inverter using Accurate IGBT Model based on Datasheet and Measurement

Abstract

The output voltage and current from dc-ac inverter generate switching noises and may cause electromagnetic interference (EMI) problems to other electronic systems. To analyze high frequency switching behavior of an inverter accurately, an accurate IGBT model is essential. In this study, an insulated gate bipolar transistor (IGBT) is modeled using datasheet and measurement data to analyze the high frequency characteristics of a high-power full-bridge inverter. The effectiveness of the proposed IGBT model is verified by comparing the simulated results of the inverter using the proposed IGBT model with measured results in frequency domain.

Meeting Name

2015 IEEE Electrical Design of Advanced Packaging and Systems Symposium, IEEE EDAPS 2015 (2015: Dec. 14-16, Seoul, South Korea)

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Electromagnetic Compatibility (EMC) Laboratory

Keywords and Phrases

electromagnetic interference; IGBT; inductance measurement; inverters; parasitic capacitance; semiconductor device modeling

International Standard Book Number (ISBN)

978-146738099-7

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2016 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Dec 2016

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